Characterization of low Cost P-Cu2O/N-CUO Junction

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dc.contributor.authorSamarasekara, P.
dc.date.accessioned2024-10-29T07:05:11Z
dc.date.available2024-10-29T07:05:11Z
dc.date.issued2010
dc.description.abstractOptical and electrical properties of thin film p-Cu2 O/n-CuO junction were investigated. It was found that such junction can be fabricated by controlled oxidation of copper films in 400-500 o C in different O2 and Ar partial pressures. Clear diode characteristics were observed at room temperature (25 o C) for the thin film device fabricated on transparent conductive glass substrates. The breakdown voltage and threshold voltages were -0.95 V and 0.75 V, respectively. Optical properties of Cu 2 O and CuO thin films clearly indicated that each film and their junction well agree with previously reported data.
dc.identifier.citationGESJ: Physics Vol. 2, No. 4, 2010 pp. 3-8
dc.identifier.urihttps://ir.lib.pdn.ac.lk/handle/20.500.14444/2768
dc.language.isoen_US
dc.publisherUniversity of Peradeniya
dc.relation.ispartofseries2; 4
dc.subjectp-n junctions
dc.subjectCuO
dc.subjectCu 2 O
dc.subjectthin films
dc.titleCharacterization of low Cost P-Cu2O/N-CUO Junction
dc.typeArticle
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