Characterization of low Cost P-Cu2O/N-CUO Junction
Date
2010
Authors
Samarasekara, P.
Journal Title
Journal ISSN
Volume Title
Publisher
University of Peradeniya
Abstract
Optical and electrical properties of thin film p-Cu2 O/n-CuO junction were investigated. It was found that such junction can be fabricated by controlled oxidation of copper films in 400-500 o C in different O2 and Ar partial pressures. Clear diode characteristics were observed at room temperature (25 o C) for the thin film device fabricated on transparent conductive glass substrates. The breakdown voltage and threshold voltages were -0.95 V and 0.75 V, respectively. Optical properties of Cu 2 O and CuO thin films clearly indicated that each film and their junction well agree with previously reported data.
Description
Keywords
p-n junctions , CuO , Cu 2 O , thin films
Citation
GESJ: Physics Vol. 2, No. 4, 2010 pp. 3-8